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High Mobility MIS Interfaces with Wide Bandgap Semiconductors

  • Author / Creator
    Milburn, Eric
  • As communications technologies continue to grow, the role of gallium nitride (GaN) transistors for high-frequency applications continues to grow as the speed requirements of more and more applications exceed the abilities of silicon. Today the vast majority of commercial GaN devices use HEMT architectures which are far more complicated to manufacture and have inferior offstate performance in comparison to standard MOSFET architecture. The primary cause for this is the lack of dielectric materials capable of forming an interface with GaN that does not dramatically degrade carrier mobility due to interface traps. In this research I demonstrate that atomic layer deposited (ALD) silicon nitride (SiN) forms an interface with GaN that bypasses any deleterious effects of interface traps and allows for high mobility of carriers within a simple threelayer MOSCAP device. The GaN-SiN-ruthenium system used in these MOSCAPs is analyzed through materials and electronic characterization to describe the chemical makeup and band structure of the system. These findings suggest a promising path of research for developing architecturally simple lateral GaN MOSFETs with speeds comparable to commercial HEMTs with superior off-state performance.

  • Subjects / Keywords
  • Graduation date
    Fall 2021
  • Type of Item
    Thesis
  • Degree
    Master of Science
  • DOI
    https://doi.org/10.7939/r3-d91w-nn49
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.